1PS79SB31,115 NXP Semiconductors, 1PS79SB31,115 Datasheet - Page 3

• Manufacturer Part Number: 1PS79SB31,115
• Description: DIODE SCHOTTKY 30V 200MA SC79
• Manufacturer: NXP Semiconductors

Specifications of 1PS79SB31,115

• Package / Case: SC-79, SOD-523
• Voltage - Forward (vf) (max) @ If: 500mV @ 200mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 30µA @ 10V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Capacitance @ Vr, F: 25pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1 A
• Configuration: Single
• Forward Voltage Drop: 0.5 V
• Maximum Reverse Leakage Current: 30 uA @ 10 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1PS79SB31 T/R; 1PS79SB31 T/R; 934056795115

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SC-79 (SOD523) standard mounting conditions.
2002 Jan 11
V
I
C
R
SYMBOL
SYMBOL
amb
R
F
Schottky barrier diode
d
th j-a
= 25 °C unless otherwise specified.
forward voltage
continuous reverse current
diode capacitance
thermal resistance from junction to
ambient
p
= 300 μs; δ = 0.02.
PARAMETER
PARAMETER
see Fig.2;
V
V
note 1
R
R
I
I
I
I
I
F
F
F
F
F
= 10 V; note 1; see Fig.3
= 1 V; f = 1 MHz; see Fig.4
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 200 mA
3
CONDITIONS
CONDITIONS
130
190
255
355
420
2.5
20
MIN.
VALUE
450
190
250
300
410
500
30
25
1PS79SB31
MAX.
Product data sheet
UNIT
K/W
mV
mV
mV
mV
mV
μA
pF
UNIT