RB521S-30FTE61 Rohm Semiconductor, RB521S-30FTE61 Datasheet - Page 2

• Manufacturer Part Number: RB521S-30FTE61
• Description: DIODE SCHOTTKY 30V 200MA EMD2
• Manufacturer: Rohm Semiconductor

Specifications of RB521S-30FTE61

• Voltage - Forward (vf) (max) @ If: 500mV @ 200mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA
• Current - Reverse Leakage @ Vr: 30µA @ 10V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

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RB521S-30
0.001
1000
1000
0.01
100
450
440
430
420
410
400
20
15
10
100
0.1
10
10
5
0
0.001
1
0
Ta=75℃
Ta=125℃
FORWARD VOLTAGE：VF(mV)
100
VF-IF CHARACTERISTICS
Rth-t CHARACTERISTICS
IFSM DISPERSION MAP
VF DISPERSION MAP
0.1
AVE:421.0mV
200
TIME:(s)
AVE:5.60A
IM=1mA
Mounted on epoxy board
1ms
Ifsm
300
300us
Ta=25℃
10
time
8.3ms
Ta=-25℃
IF=200mA
Ta=25℃
n=10pcs
Rth(j-a)
Rth(j-c)
400
IF=20mA
1cyc
1000
500
100000
10000
0.15
0.05
50
45
40
35
30
25
20
15
10
1000
0.2
0.1
0.01
5
0
100
10
0.1
0
10
5
0
1
0
1
0
Sin(θ＝180)
IFSM-CYCLE CHARACTERISTICS
FORWARD CURRENT：Io(A)
Io-Pｆ CHARACTERISTICS
0.1
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
AVERAGE RECTIFIED
NUMBER OF CYCLES
IR DISPERSION MAP
D=1/2
AVE:4.775uA
2/3
10
0.2
Ifsm
10
0.3
8.3ms
20
1cyc
Ta=25℃
VR=10V
n=30pcs
DC
8.3ms
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.4
100
30
0.5
100
0.5
0.4
0.3
0.2
0.1
10
20
19
18
17
16
15
14
13
12
11
10
10
1
5
0
0
0
1
0
Sin(θ＝180)
IFSM-t CHARACTERISTICS
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-P
REVERSE VOLTAGE:VR(V)
5
Ct DISPERSION MAP
10
R
CHARACTERISTICS
TIME:t(ms)
AVE:14.33pF
DC
10
10
2011.03 - Rev.F
D=1/2
Ifsm
20
Data Sheet
15
Ta=25℃
n=10pcs
f=1MHz
f=1MHz
VR=0V
t
30
20
100