RB521S-40TE61 Rohm Semiconductor, RB521S-40TE61 Datasheet

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... Schottky barrier diode RB521S-40 Applications Rectifying small power Features 1) Ultra small mold type. (EMD2) 2) Low High reliability Construction Silicon epitaxial planar Absolute maximum ratings （Ta=25℃） Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average retified forward current Forward currnt surge peak(60Hz/1cyc) ...

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... RB521S-40 Electrical characteristic curves 1000 Ta=75℃ 100 Ta=125℃ Ta=150℃ Ta=-25℃ 10 Ta=25℃ 100 200 300 400 500 FORWARD VOLTAGE : V (mV CHARACTERISTICS F F 520 Ta=25℃ I =200mA F 510 n=30pcs 500 490 AVE:495.2mV 480 470 V DISPERSION MAP F 20 1cyc ...

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... RB521S-40 0 0.4 D=t =20V R Tj=150℃ T 0.3 Sin(θ＝180) 0.2 0.1 D=1 100 125 AMBIENT TEMPERATURE : Ta(℃) Derating Curve"(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 　 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 150 100 125 CASE TEMPARATURE : Tc(℃ ...

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