PMEG2005AEV,115 NXP Semiconductors, PMEG2005AEV,115 Datasheet - Page 6

• Manufacturer Part Number: PMEG2005AEV,115
• Description: SCHOTTKY RECT 20V 0.5A SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMEG2005AEV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 390mV @ 500mA
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 500mA (DC)
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 80pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 0.5 A
• Max Surge Current: 10 A
• Configuration: Single
• Forward Voltage Drop: 0.39 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057831115; PMEG2005AEV T/R; PMEG2005AEV T/R

NXP Semiconductors
2003 Aug 20
handbook, halfpage
handbook, halfpage
Very low V
Schottky barrier rectifiers
PMEG3005AEV
(1) T
(2) T
(3) T
Fig.5
PMEG3005AEV
f = 1 MHz; T
Fig.7
(mA)
(pF)
I F
10
C d
120
10
10
80
40
10
−1
amb
amb
amb
0
1
3
2
0
0
= 150 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
(1)
amb
= 25 °C.
(2)
F
5
MEGA
0.2
(3)
10
0.4
15
V F (V)
V R (V)
MDB674
MDB672
0.6
20
6
handbook, halfpage
PMEG3005AEV
(1) T
(2) T
(3) T
Fig.6
PMEG2005AEV; PMEG3005AEV;
(μA)
I R
10
10
10
10
10
amb
amb
amb
1
5
4
3
2
0
= 150 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
10
(1)
(2)
(3)
PMEG4005AEV
20
Product data sheet
V R (V)
MDB673
30