PMEG3005AEV,115 NXP Semiconductors, PMEG3005AEV,115 Datasheet - Page 4

• Manufacturer Part Number: PMEG3005AEV,115
• Description: SCHOTTKY RECT 30V 0.5A SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMEG3005AEV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 430mV @ 500mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 500mA (DC)
• Current - Reverse Leakage @ Vr: 150µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 70pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.5 A
• Max Surge Current: 10 A
• Configuration: Single
• Forward Voltage Drop: 0.43 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057832115; PMEG3005AEV T/R; PMEG3005AEV T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Aug 20
V
I
C
SYMBOL
amb
R
F
Very low V
Schottky barrier rectifiers
d
= 25 °C unless otherwise specified.
forward voltage
continuous reverse
current
diode capacitance
p
PARAMETER
≤ 300 μs; δ ≤ 0.02.
F
MEGA
I
I
I
I
I
V
V
V
V
V
F
F
F
F
F
R
R
R
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 500 mA
CONDITIONS
= 10 V; note 1
= 20 V; note 1
= 30 V; note 1
= 40 V; note 1
= 1 V; f = 1 MHz
90
150
210
280
355
15
40
−
−
66
PMEG2005AEV PMEG3005AEV PMEG4005AEV
TYP.
4
PMEG2005AEV; PMEG3005AEV;
130
190
240
330
390
40
200
−
−
80
MAX.
90
150
215
285
380
12
−
40
−
55
TYP.
130
200
250
340
430
30
−
150
−
70
MAX.
PMEG4005AEV
95
155
220
295
420
7
−
−
30
43
TYP.
Product data sheet
130
210
270
350
470
20
−
−
100
50
MAX.
mV
mV
mV
mV
mV
μA
μA
μA
μA
pF
UNIT