PMEG3010BEV,115 NXP Semiconductors, PMEG3010BEV,115 Datasheet - Page 7

• Manufacturer Part Number: PMEG3010BEV,115
• Description: SCHOTTKY RECT 30V 1A SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMEG3010BEV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 560mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 150µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 70pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1 A
• Max Surge Current: 10 A
• Configuration: Single
• Forward Voltage Drop: 0.56 V
• Maximum Reverse Leakage Current: 150 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058329115; PMEG3010BEV T/R; PMEG3010BEV T/R

NXP Semiconductors
2004 Jun 14
handbook, halfpage
1 A very low V
barrier rectifier
PMEG4010BEA/PMEG4010BEV
T
Fig.11 Diode capacitance as a function of reverse
amb
(pF)
C d
100
80
60
40
20
= 25 °C; f = 1 MHz.
0
0
voltage; typical values.
5
F
MEGA Schottky
10
15
V R (V)
MHC681
20
7
PMEGXX10BEA;
PMEGXX10BEV
Product data sheet