PMEG3015EV,115 NXP Semiconductors, PMEG3015EV,115 Datasheet - Page 3

• Manufacturer Part Number: PMEG3015EV,115
• Description: SCHOTTKY RECT 30V 1.5A SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMEG3015EV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 550mV @ 1.5A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1.5A (DC)
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 72pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1.5 A
• Max Surge Current: 9.5 A
• Configuration: Single Dual Anode Quad Cathode
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058427115; PMEG3015EV T/R; PMEG3015EV T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
PMEG3015EV_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 6.
[1]
[2]
[3]
[4]
Symbol Parameter
V
I
I
I
P
T
T
T
Symbol
R
R
F
FRM
FSM
j
amb
stg
R
tot
th(j-a)
th(j-sp)
For SOT666 only valid, if pins 3 and 4 are connected in parallel.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1cm
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
power losses P
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1cm
reverse voltage
forward current
repetitive peak forward current t
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
R
R
are a significant part of the total power losses. Nomograms for determining the reverse
and I
F(AV)
Rev. 02 — 4 February 2010
rating will be available on request.
30 V, 1.5 A ultra low V
Conditions
T
t
wave
T
p
p
sp
amb
≤ 1 ms; δ ≤ 0.25
= 8 ms; square
≤ 55 °C
Conditions
in free air
≤ 25 °C
F
MEGA Schottky barrier rectifier
[1][2]
[1]
[1]
[2]
[3]
[3]
[4]
PMEG3015EV
-
-
Min
-
-
-
-
-
−65
−65
Min
-
-
-
Typ
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
30
1.5
4.5
9.5
0.31
0.58
150
+150
+150
Max
405
215
80
Unit
V
A
A
A
W
W
°C
°C
°C
Unit
K/W
K/W
K/W
3 of 10
2
2
.
.