RB162VA-20TR Rohm Semiconductor, RB162VA-20TR Datasheet - Page 2

• Manufacturer Part Number: RB162VA-20TR
• Description: DIODE SCHOTTKY 25V 1A TUMD2
• Manufacturer: Rohm Semiconductor

Specifications of RB162VA-20TR

• Voltage - Forward (vf) (max) @ If: 400mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1.2mA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: TUMD2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

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Electrical characteristics curves
RB162VA-20
0.001
30
25
20
15
10
400
380
360
340
320
300
0.01
30
25
20
15
10
5
0
0.1
5
0
10
1
1
0.0
Ta=75C
Ta=125C
0.1
FORWARD VOLTAGE : V
I
FSM
V
I
F
FSM
-I
-t CHARACTERISTICS
V
F
F
CHARACTERISTICS
DISRESION MAP
TIME : t(ms)
0.2
DISPERSION MAP
AVE : 371mV
AVE : 14.6A
10
Ta=-25C
Ifsm
0.3
Ta=25C
Ifsm
8.3ms
F
0.4
(V)
Ta=25C
n=30pcs
V
t
F
=1.0A
1cyc
0.5
100
1000
100000
100
10000
450
400
350
300
250
10
1000
30
25
20
15
10
0.001
100
5
0
10
1
0
On glass-epoxy board
IM=10mA
0.01
1ms
REVERSE VOLTAGE : V
300s
Rth-t CHARACTERISTICS
V
R
trr DISPERSION MAP
time
-I
I
0.1
R
R
DISPERSION MAP
CHARACTERISTICS
AVE : 7.70ns
AVE : 354A
TIME : t(s)
I
2/3
F
=0.1A
1
10
Ta=125C
Ta=75C
10
Ta=25C
Ta=-25C
Irr=0.25*I
Ta=25C
n=10pcs
R
I
F
I
(V)
Rth(j-c)
=0.5A
R
Ta=25C
Rth(j-a)
n=30pcs
100
V
=1A
R
=20V
R
1000
20
30
25
20
15
10
1000
180
178
176
174
172
170
168
166
164
162
160
0.3
0.2
0.1
100
5
0
10
0
1
1
0
0
Sin(=180)
D=1/2
FORWARD CURRENT : Io(A)
0.1
REVERSE VOLTAGE : V
V
Io-Pf CHARACTERISTICS
I
FSM
R
AVERAGE RECTIFIED
5
-Ct CHARACTERISTICS
Ct DISPERSION MAP
-CYCLE CHARACTERISTICS
NUMBER OF CYCLES
AVE:172pF
0.2
Ifsm
10
10
0.3
8.3ms
2010.02 - Rev.A
1cyc
R
DC
15
(V)
Data Sheet
Ta=25C
8.3ms
n=30pcs
f=1MHz
0.4
V
f=1MHz
R
=0V
100
20
0.5