RB160L-90TE25 Rohm Semiconductor, RB160L-90TE25 Datasheet - Page 2

DIODE SCHOTTKY 95V 1A PMDS

RB160L-90TE25

Manufacturer Part Number
RB160L-90TE25
Description
DIODE SCHOTTKY 95V 1A PMDS
Manufacturer
Rohm Semiconductor
Datasheets

Specifications of RB160L-90TE25

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
730mV @ 1A
Voltage - Dc Reverse (vr) (max)
90V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
100µA @ 90V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-106, PMDS
Repetitive Reverse Voltage Vrrm Max
95V
Forward Current If(av)
1A
Forward Voltage Vf Max
730mV
Forward Surge Current Ifsm Max
30A
Diode Case Style
SOD-106
No. Of Pins
2
Svhc
No SVHC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RB160L-90TE25
Manufacturer:
ROHM
Quantity:
20 000
Diodes
Electrical characteristic curves
0.001
0.01
150
100
200
150
100
650
640
630
620
610
600
0.1
50
50
1
0
0
0
1
Ta=150℃
100
Ta=125℃
FORWARD VOLTAGE:VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
200
VF DISPERSION MAP
IFSM DISRESION MAP
Ta=75℃
TIME:t(ms)
300
AVE:632.1mV
AVE:56.0A
10
400
Ifsm
Ifsm
500
Ta=-25℃
Ta=25℃
Ta=25℃
n=30pcs
8.3ms
t
IF=1A
600
1cyc
100
700
10000
100
1000
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0.01
1000
100
0
5
0
0.1
100
10
0.1
10
1
1
0.001
0
IM=10mA
10
0.01
REVERSE VOLTAGE:VR(V)
1ms
Rth-t CHARACTERISTICS
VR-IR CHARACTERISTICS
20
300us
trr DISPERSION MAP
IR DISPERSION MAP
30
time
0.1
AVE:4.655uA
AVE:478.3nA
σ:36.1612nA
TIME:t(s)
AVE:7.40ns
Ta=150℃
40
IF=0.5A
1
50
60
10
70
Ta=75℃
Irr=0.25*IR
Ta=125℃
Ta=25℃
Ta=-25℃
Ta=25℃
VR=90V
n=30pcs
Ta=25℃
VR=100V
n=10pcs
Ta=25℃
IF=0.5A
n=30pcs
100
IR=1A
Rth(j-a)
Rth(j-c)
80
90
1000
200
190
180
170
160
150
140
130
120
110
100
1000
100
100
50
10
0
1
2
1
0
1
0
0
IFSM-CYCLE CHARACTERISTICS
5
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
Sin(θ=180)
Ct DISPERSION MAP
NUMBER OF CYCLES
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
10
AVERAGE RECTIFIED
AVE:149.6pF
Ifsm
15
RB160L-90
10
1
20
8.3ms
D=1/2
1cyc
f=1MHz
25
Ta=25℃
n=10pcs
8.3ms
f=1MHz
VR=0V
DC
30
2/3
100
2

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