RF101L2STE25 Rohm Semiconductor, RF101L2STE25 Datasheet
RF101L2STE25
Manufacturer Part Number
RF101L2STE25
Description
DIODE FAST REC 200V 1A SOD-106
Manufacturer
Rohm Semiconductor
Datasheet
1.RF101L2STE25.pdf
(4 pages)
Specifications of RF101L2STE25
Voltage - Forward (vf) (max) @ If
870mV @ 1A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25ns
Mounting Type
Surface Mount
Package / Case
SOD-106, PMDS
Fast Recovery 200v 1a
Diode Type
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
1A
Forward Voltage Vf Max
870mV
Reverse Recovery Time Trr Max
25ns
Forward Surge Current Ifsm Max
20A
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
0.87 V
Recovery Time
25 ns
Forward Continuous Current
1 A
Max Surge Current
20 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
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Price
Company:
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RF101L2STE25
Manufacturer:
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Company:
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ROHM
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Diodes
Fast recovery Diode
RF101L2S
General rectification
1) Small power mold type. (PMDS)
2) Ultra low V
3) Very fast recovery
4) Low switching loss
Silicon epitaxial planar
Forward voltage
Reverse current
Reverse recovery time
Rverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward peak surge current (60Hz 1cyc.)
Junction temperature
Storage temperature
(*1)Tc=90 max Mounted on epoxy board. 180°Half sine wave
Features
Construction
Electrical characteristics (Ta=25 C)
Applications
Absolute maximum ratings (Ta=25 C)
Parameter
F
Parameter
Symbol
V
I
R
F
Dimensions (Unit : mm)
Taping specifications (Unit : mm)
Min.
-
-
-
Symbol
Tstg
V
I
0.815
V
FSM
Io
Tj
Typ.
0.01
RM
12
R
Max.
0.87
10
25
-55 to +150
Limits
200
200
150
Unit
20
μA
ns
1
V
I
V
Land size figure (Unit : mm)
F
Structure
=1.0A
R
=200V
Unit
Conditions
V
V
A
A
Rev.B
RF101L2S
1/3
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RF101L2STE25 Summary of contents
Page 1
Diodes Fast recovery Diode RF101L2S Applications General rectification Features 1) Small power mold type. (PMDS) 2) Ultra low Very fast recovery 4) Low switching loss Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25 C) Parameter Rverse voltage ...
Page 2
Diodes Electrical characteristic curves (Ta=25 C) Mounted on epoxy board RF101L2S Rev.B 2/3 ...
Page 3
Diodes RF101L2S Rev.B 3/3 ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...