RB160L-60TE25 Rohm Semiconductor, RB160L-60TE25 Datasheet - Page 2

• Manufacturer Part Number: RB160L-60TE25
• Description: DIODE SCHOTTKY 60V 1A SOD-106 TR
• Manufacturer: Rohm Semiconductor

Specifications of RB160L-60TE25

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 580mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-106, PMDS
• Repetitive Reverse Voltage Vrrm Max: 60V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 580mV
• Forward Surge Current Ifsm Max: 30A
• Diode Case Style: SOD-106
• No. Of Pins: 2
• Svhc: No SVHC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Diodes
Electrical characteristic curves (Ta=25°C)
1000
200
150
100
200
150
100
100
550
540
530
520
510
500
50
50
10
0
0
1
1
0
Ta=125℃
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
Ta=75℃
VF DISPERSION MAP
IFSM DISRESION MAP
200
AVE:529.4mV
TIME:t(ms)
AVE:126.0A
10
400
Ifsm
Ifsm
Ta=-25℃
Ta=25℃
8.3ms
Ta=25℃
n=30pcs
IF=1A
t
600
1cyc
100
10000
0.001
1000
0.01
100
30
25
20
15
10
1000
0.1
30
25
20
15
10
10
5
0
100
5
0
0.1
1
10
1
0.001
0
Mounted on epoxy board
10
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
trr DISPERSION MAP
IR DISPERSION MAP
20
0.1
AVE:3.724uA
TIME:t(s)
AVE:11.7ns
30
IM=10mA
1ms
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
300us
40
10
Irr=0.25*IR
time
Ta=25℃
n=10pcs
IF=0.5A
IR=1A
Ta=25℃
n=30pcs
VR=60V
Rth(j-c)
50
Rth(j-a)
IF=0.5A
60
1000
1000
200
150
100
1.5
0.5
200
190
180
170
160
150
100
50
2
1
0
10
0
1
0
1
0
IFSM-CYCLE CHARACTERISTICS
Sin(θ＝180)
FORWARD CURRENT：Io(A)
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Io-Pf CHARACTERISTICS
0.5
AVERAGE RECTIFIED
Ct DISPERSION MAP
NUMBER OF CYCLES
10
AVE:192.4pF
Ifsm
Rev.B
10
1
RB160L-60
15
8.3ms
D=1/2
20
1cyc
f=1MHz
1.5
8.3ms
Ta=25℃
n=10pcs
f=1MHz
VR=0V
25
DC
100
2
30
2/3