1PS88SB82,115 NXP Semiconductors, 1PS88SB82,115 Datasheet - Page 3

DIODE SCHOTTKY 15V 30MA SC88

1PS88SB82,115

Manufacturer Part Number
1PS88SB82,115
Description
DIODE SCHOTTKY 15V 30MA SC88
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 1PS88SB82,115

Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
700mV @ 30mA
Current - Reverse Leakage @ Vr
200nA @ 1V
Current - Average Rectified (io) (per Diode)
30mA (DC)
Voltage - Dc Reverse (vr) (max)
15V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Capacitance @ Vr, F
1pF @ 0V, 1MHz
Current - Average Rectified (io)
30mA (DC)
Product
Schottky Diodes
Peak Reverse Voltage
15 V
Forward Continuous Current
0.03 A
Configuration
Triple Parallel
Forward Voltage Drop
0.7 V
Maximum Reverse Leakage Current
0.2 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1PS88SB82 T/R
1PS88SB82 T/R
934056580115
NXP Semiconductors
6. Thermal characteristics
7. Characteristics
1PS66SB82_1PS88SB82_4
Product data sheet
Table 7.
[1]
[2]
[3]
[4]
Table 8.
T
[1]
Symbol
R
Symbol
V
I
r
C
R
dif
amb
F
th(j-a)
d
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
power losses P
Refer to SOT666 standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT363 (SC-88) standard mounting conditions.
Pulse test: t
= 25
°
C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
forward voltage
reverse current
differential
resistance
diode
capacitance
Parameter
thermal resistance from
junction to ambient
p
SOT666
SOT363
≤ 300 μs; δ ≤ 0.02.
R
R
are a significant part of the total power losses. Nomograms for determining the reverse
and I
F(AV)
Rev. 04 — 13 January 2010
rating will be available on request.
see
Conditions
V
I
see
V
see
F
R
R
I
I
= 5 mA; f = 1 kHz;
F
F
= 1 V; see
= 0 V; f = 1 MHz;
Figure 1
Figure 3
Figure 4
= 1 mA
= 30 mA
Conditions
in free air
1PS66SB82; 1PS88SB82
Figure 2
15 V, 30 mA low C
[2][3]
[3][4]
[1]
[1]
Min
-
-
-
-
-
Min
-
-
d
Typ
-
-
-
12
1
Typ
-
-
Schottky barrier diodes
© NXP B.V. 2010. All rights reserved.
Max
340
700
0.2
-
-
Max
700
416
Unit
mV
mV
μA
Ω
pF
Unit
K/W
K/W
3 of 10

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