1PS88SB82,115 NXP Semiconductors, 1PS88SB82,115 Datasheet - Page 3

• Manufacturer Part Number: 1PS88SB82,115
• Description: DIODE SCHOTTKY 15V 30MA SC88
• Manufacturer: NXP Semiconductors

Specifications of 1PS88SB82,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 700mV @ 30mA
• Current - Reverse Leakage @ Vr: 200nA @ 1V
• Current - Average Rectified (io) (per Diode): 30mA (DC)
• Voltage - Dc Reverse (vr) (max): 15V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Capacitance @ Vr, F: 1pF @ 0V, 1MHz
• Current - Average Rectified (io): 30mA (DC)
• Product: Schottky Diodes
• Peak Reverse Voltage: 15 V
• Forward Continuous Current: 0.03 A
• Configuration: Triple Parallel
• Forward Voltage Drop: 0.7 V
• Maximum Reverse Leakage Current: 0.2 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1PS88SB82 T/R; 1PS88SB82 T/R; 934056580115

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
1PS66SB82_1PS88SB82_4
Product data sheet
Table 7.
[1]
[2]
[3]
[4]
Table 8.
T
[1]
Symbol
R
Symbol
V
I
r
C
R
dif
amb
F
th(j-a)
d
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
power losses P
Refer to SOT666 standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT363 (SC-88) standard mounting conditions.
Pulse test: t
= 25
°
C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
forward voltage
reverse current
differential
resistance
diode
capacitance
Parameter
thermal resistance from
junction to ambient
p
SOT666
SOT363
≤ 300 μs; δ ≤ 0.02.
R
R
are a significant part of the total power losses. Nomograms for determining the reverse
and I
F(AV)
Rev. 04 — 13 January 2010
rating will be available on request.
see
Conditions
V
I
see
V
see
F
R
R
I
I
= 5 mA; f = 1 kHz;
F
F
= 1 V; see
= 0 V; f = 1 MHz;
Figure 1
Figure 3
Figure 4
= 1 mA
= 30 mA
Conditions
in free air
1PS66SB82; 1PS88SB82
Figure 2
15 V, 30 mA low C
[2][3]
[3][4]
[1]
[1]
Min
-
-
-
-
-
Min
-
-
d
Typ
-
-
-
12
1
Typ
-
-
Schottky barrier diodes
© NXP B.V. 2010. All rights reserved.
Max
340
700
0.2
-
-
Max
700
416
Unit
mV
mV
μA
Ω
pF
Unit
K/W
K/W
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