BYW29ED-200,118 NXP Semiconductors, BYW29ED-200,118 Datasheet - Page 6

DIODE RECT 200V 8A SOT428

BYW29ED-200,118

Manufacturer Part Number
BYW29ED-200,118
Description
DIODE RECT 200V 8A SOT428
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYW29ED-200,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Voltage - Forward (vf) (max) @ If
1.05V @ 8A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25ns
Mounting Type
Surface Mount
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1.3 V at 20 A
Recovery Time
25 ns
Forward Continuous Current
8 A
Max Surge Current
88 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934054883118
BYW29ED-200 /T3
BYW29ED-200 /T3
Philips Semiconductors
MECHANICAL DATA
MOUNTING INSTRUCTIONS
Notes
1. Plastic meets UL94 V0 at 1/8".
November 1998
Rectifier diodes
ultrafast, rugged
Dimensions in mm
Net Mass: 1.1 g
Dimensions in mm
2.285 (x2)
1
Fig.15. SOT428 : minimum pad sizes for surface mounting .
6.73 max
tab
2
Fig.14. SOT428 : centre pin connected to tab.
3
0.8 max
(x2)
2.15
2.5
6.22 max
7.0
1.1
0.5 min
6
10.4 max
2.38 max
0.93 max
4.57
7.0
0.5
0.3
BYW29EB, BYW29ED series
seating plane
1.5
4 min
0.5
4.6
Product specification
5.4
Rev 1.300

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