BYV29X-600,127 NXP Semiconductors, BYV29X-600,127 Datasheet - Page 4

DIODE RECT 600V 7A SOD113

BYV29X-600,127

Manufacturer Part Number
BYV29X-600,127
Description
DIODE RECT 600V 7A SOD113
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYV29X-600,127

Package / Case
TO-220-2 Full Pack, ITO-220AC
Voltage - Forward (vf) (max) @ If
1.26V @ 8A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
9A
Current - Reverse Leakage @ Vr
50µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
60ns
Mounting Type
Through Hole
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.45 V at 20 A
Recovery Time
60 ns
Forward Continuous Current
9 A
Max Surge Current
100 A
Reverse Current Ir
50 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055896127
BYV29X-600
BYV29X-600

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYV29X-600,127
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
7. Characteristics
Table 6.
T
BYV29X-600_2
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
j
F
FR
r
= 25 C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
Conditions
I
I
I
V
V
I
see
I
dI
I
dI
see
I
see
F
F
F
F
F
F
F
R
R
F
F
= 8 A; T
= 8 A; see
= 20 A; see
= 2 A to V
= 1 A to V
= 10 A to V
= 10 A; dI
/dt = 100 A/ s; see
/dt = 50 A/ s; T
= 600 V
= 600 V; T
Figure 3
Figure 3
Figure 4
Rev. 02 — 4 September 2007
j
= 150 C; see
F
R
R
/dt = 10 A/ s;
Figure 2
R
j
Figure 2
= 100 C
30 V; dI
30 V;
30 V;
j
= 100 C;
Figure 3
F
/dt = 20 A/ s;
Figure 2
Min
-
-
-
-
-
-
-
-
-
BYV29X-600
Typ
0.97
1.12
1.31
2
0.1
40
50
3
3.2
Rectifier diode ultrafast
© NXP B.V. 2007. All rights reserved.
Max
1.11
1.26
1.45
50
0.35
70
60
5.5
-
Unit
V
V
V
mA
nC
ns
A
V
A
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