STTH4R02B-TR STMicroelectronics, STTH4R02B-TR Datasheet - Page 5

• Manufacturer Part Number: STTH4R02B-TR
• Description: DIODE ULT FAST 200V 4A DPAK
• Manufacturer: STMicroelectronics

Specifications of STTH4R02B-TR

• Voltage - Forward (vf) (max) @ If: 1.05V @ 4A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 4A
• Current - Reverse Leakage @ Vr: 3µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.25 V at 12 A
• Recovery Time: 30 ns
• Forward Continuous Current: 4 A
• Max Surge Current: 70 A
• Reverse Current Ir: 3 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5258-2

STTH4R02
Figure 9.
Figure 11. Reverse recovery time versus dI
Figure 13. Dynamic parameters versus
100
80
70
60
50
40
30
20
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
0
10
25
1
V
R
I
F
=160V
=4A
Junction capacitance versus
reverse applied voltage
(typical values)
(typical values)
junction temperature
50
I
RM
10
Q
RR
75
100
T
T
j
j
=25°C
=125°C
100
100
125
V
dI
osc
F=1MHz
T
F
=30mV
/dt(A/µs)
j
=25°C
T
V
j
R
(°C)
I
F
V
=160V
=4A
R
RMS
(V)
Doc ID 12360 Rev 4
1000
1000
150
F
/dt
Figure 10. Reverse recovery charges versus
Figure 12. Peak reverse recovery current
Figure 14. Thermal resistance, junction to
10
100
120
100
8
6
4
2
0
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
0
0
0
V
R
I
F
=160V
50
V
=4A
R
I
50
F
=160V
=4A
5
dI
versus dI
ambient, versus copper surface
under tab - DPAK
100
100
F
Epoxy printed circuit board FR4,
copper thickness = 35 µm
/dt (typical values)
10
150
150
T
j
=125°C
15
200
200
T
F
j
=25°C
T
/dt (typical values)
j
=125°C
250
250
20
300
300
T
25
j
=25°C
350
350
Characteristics
30
400
400
dI
S
dI
F
/dt(A/µs)
CU
F
35
/dt(A/µs)
(cm²)
450
450
DPAK
500
500
40
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