STTH5L06B-TR STMicroelectronics, STTH5L06B-TR Datasheet - Page 4

• Manufacturer Part Number: STTH5L06B-TR
• Description: DIODE ULTRA FAST 600V 5A DPAK
• Manufacturer: STMicroelectronics

Specifications of STTH5L06B-TR

• Voltage - Forward (vf) (max) @ If: 1.3V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 95ns
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.3 V
• Recovery Time: 95 ns
• Forward Continuous Current: 5 A
• Max Surge Current: 60 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3248-2

Characteristics
4/10
Figure 5.
Figure 7.
Figure 9.
1000
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
900
800
700
600
500
400
300
200
100
1.E-01
0
0
S factor
Z
δ = 0.5
δ = 0.2
Single pulse
0
δ = 0.1
t (ns)
th(j-c)
rr
I =I
V =400V
T =125°C
F
j
R
10
F(AV)
10
/R
I =2 x I
F
th(j-c)
20
Relative variation of thermal
impedance junction ambient versus
pulse duration (Epoxy FR4, L
10 mm) (DO-201AD)
1.E+00
Reverse recovery time versus dI
(90% confidence)
F(AV)
20
Softness factor versus dI
(typical values)
30
I =I
F
30
F(AV)
40
40
dI /dt(A/µs)
dI /dt(A/µs)
1.E+01
F
F
t (s)
p
50
50
I =0.5 x I
F
60
60
F(AV)
70
1.E+02
70
δ
=tp/T
80
80
F
/dt
V =400V
T =125°C
T
j
R
leads
90
90
tp
1.E+03
F
/dt
100
100
=
Figure 6.
Figure 8.
Figure 10. Relative variations of dynamic
500
450
400
350
300
250
200
150
100
8
7
6
5
4
3
2
1
0
1.25
1.00
0.75
0.50
0.25
0.00
50
0
0
I
RM
25
0
Q (nC)
V =400V
T =125°C
j
R
rr
(A)
V =400V
T =125°C
j
R
10
10
I =0.25 x I
F
20
20
F(AV)
Peak reverse recovery current
versus dI
Reverse recovery charges versus
dI
parameters versus junction
temperature
50
F
30
/dt (90% confidence)
30
I =0.5 x I
F
40
F(AV)
dI /dt(A/µs)
40
S factor
dI /dt(A/µs)
F
I
Q
F
RM
RR
/dt (90% confidence)
F
T (°C)
50
j
50
75
I =0.5 x I
I =I
F
I =2 x I
F
F
I =I
F
F(AV)
F(AV)
F(AV)
60
F(AV)
60
I =2 x I
F
70
70
F(AV)
100
Reference: T =125°C
80
80
V =400V
I =I
F
R
STTH5L06
F(AV)
j
90
90
100
100
125