STTH5L06B-TR STMicroelectronics, STTH5L06B-TR Datasheet - Page 5

• Manufacturer Part Number: STTH5L06B-TR
• Description: DIODE ULTRA FAST 600V 5A DPAK
• Manufacturer: STMicroelectronics

Specifications of STTH5L06B-TR

• Voltage - Forward (vf) (max) @ If: 1.3V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 95ns
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.3 V
• Recovery Time: 95 ns
• Forward Continuous Current: 5 A
• Max Surge Current: 60 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3248-2

STTH5L06
Figure 11. Transient peak forward voltage
Figure 13. Junction capacitance versus
Figure 15. Thermal resistance junction to
10
80
70
60
50
40
30
20
10
100
9
8
7
6
5
4
3
2
1
0
0
10
1
0.0
0
V
1
R
C(pF)
FP
th(j-a)
I =I
T =125°C
F
j
(V)
F(AV)
0.5
20
(°C/W)
1.0
40
versus dI
reverse voltage applied (typical
values)
ambient versus copper surface
under each lead (epoxy printed
circuit board FR4, copper
thickness: 35µm) (DO-201AD)
1.5
60
10
80
2.0
dI /dt(A/µs)
F
S
DO-201AD
F
/dt (90% confidence)
CU
V (V)
100
R
2.5
(cm²)
120
3.0
100
140
3.5
160
4.0
V
OSC
F=1MHz
T =25°C
j
180
=30mV
4.5
1000
200
5.0
Figure 12. Forward recovery time versus dI
Figure 14. Thermal resistance junction to
80
70
60
50
40
30
20
10
200
180
160
140
120
100
80
60
40
20
0
0
0
R
0
t (ns)
fr
th(j-a)
2
20
(°C/W)
40
4
(90% confidence)
ambient versus copper surface
under tab (epoxy FR4, eCU = 35 µm)
(DPAK)
60
6
80
8
dI /dt(A/µs)
F
S
CU
100
10
(cm²)
120
12
140
14
Characteristics
V =1.1 x V max.
160
16
FR
T =125°C
I =I
F
j
F(AV)
180
F
18
F
5/10
/dt
200
20