STTH312B-TR STMicroelectronics, STTH312B-TR Datasheet - Page 2

• Manufacturer Part Number: STTH312B-TR
• Description: DIODE ULT FAST 1200V 3A DPAK
• Manufacturer: STMicroelectronics

Specifications of STTH312B-TR

• Voltage - Forward (vf) (max) @ If: 2V @ 3A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 115ns
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-5764-2

Characteristics
1
Table 1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
2/8
Symbol
Symbol
I
F(RMS)
V
I
V
I
I
I
F(AV)
T
FRM
FSM
R
RRM
T
F
stg
(1)
(2)
j
Symbol
R
Reverse leakage current
Forward voltage drop
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
th(j-c)
p
p
Characteristics
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Thermal parameter
Static electrical characteristics
To evaluate the conduction losses use the following equation: P =
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Parameter
Junction to case
Parameter
Parameter
T
T
T
T
T
j
j
j
j
j
= 25° C
= 125° C
= 25° C
= 125° C
= 150° C
t
t
p
p
Test conditions
= 5 µs, F = 5 kHz square
= 10 ms Sinusoidal
V
I
F
R
= 3 A
= V
Value
3.8
RRM
T
c
= 150° C
Min.
1.4
x I
1.20
1.15
Typ
-65 to + 175
2
F(AV)
Value
1200
175
35
35
6
3
°C/W
Unit
+
Max.
1.65
100
1.7
0.1
10
2
STTH312
I
F
2
Unit
(RMS)
Unit
°C
°C
V
A
A
A
A
µA
V