STTH312 STMicroelectronics, STTH312 Datasheet

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STTH312

Manufacturer Part Number
STTH312
Description
Ultrafast recovery - 1200 V diode
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
STTH312
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ST
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Part Number:
STTH312B
Manufacturer:
ST
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Part Number:
STTH312B-TR
Manufacturer:
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Part Number:
STTH312BTR
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6 994
Main product characteristics
Features and benefits
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
March 2006
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
V
t
V
rr
I
F
F(AV)
RRM
(typ)
T
(typ)
j
1200 V
175° C
1.15 V
55 ns
3 A
Rev 1
Ultrafast recovery - 1200 V diode
Order codes
STTH312B-TR
Part Number
STTH312B
K
STTH312B
A
DPAK
NC
K
STTH312
A
STTH312B
STTH312B
Marking
www.st.com
1/8
8

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STTH312 Summary of contents

Page 1

... March 2006 Ultrafast recovery - 1200 V diode 3 A 1200 V 175° Order codes Part Number STTH312B STTH312B-TR Rev 1 STTH312 DPAK STTH312B Marking STTH312B STTH312B www.st.com 1/8 8 ...

Page 2

... 25° 125° 150° Value 1200 150° - 175 175 Unit °C/W Min. Typ Max. 10 RRM 2 100 2 1.20 1.7 1.15 1. 1.4 0.1 F(AV) STTH312 Unit °C °C Unit µ (RMS) ...

Page 3

... STTH312 Table 4. Dynamic characteristics Symbol Parameter t Reverse recovery time rr I Reverse recovery current RM S Softness factor t Forward recovery time fr V Forward recovery voltage FP Figure 1. Conduction losses versus average current P(W) 7 δ = 0.2 δ = 0.1 6 δ (A) F(AV) 0 0.0 0.5 1.0 1.5 2.0 Figure 3. Relative variation of thermal impedance junction to case ...

Page 4

... Relative variations of dynamic parameters versus junction temperature S factor (° 100 (typical values) dI /dt(A/µs) F 100 200 300 STTH312 400 450 500 F(AV) V =600V R Reference: T =125°C j 125 / F(AV max =125°C j 400 ...

Page 5

... STTH312 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 Figure 12. Thermal resistance junction to R th(j-a) 100 F=1MHz 90 V =30mV OSC RMS T =25° 100 1000 Characteristics ambient versus copper surface under tab (printed circuit board FR4 µ ...

Page 6

... DIMENSIONS REF. Millimeters Inches Min. Max Min. A 2.20 2.40 0.086 A1 0.90 1.10 0.035 A2 0.03 0.23 0.001 B 0.64 0.90 0.025 B2 5.20 5.40 0.204 C 0.45 0.60 0.017 C2 0.48 0.60 0.018 D 6.00 6.20 0.236 E 6.40 6.60 0.251 G 4.40 4.60 0.173 H 9.35 10.10 0.368 L2 0.80 typ. 0.031 typ. L4 0.60 1.00 0.023 V2 0° 8° 0° 1.6 3 2.3 2.3 1.6 STTH312 Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.039 8° ...

Page 7

... STTH312 3 Ordering information Part Number STTH312B STTH312B-TR 4 Revision history Date 02-Mar-2006 Marking Package STTH312B DPAK STTH312B DPAK Revision Description of Changes 1 First issue. Ordering information Weight Base qty Delivery mode 0. Tube 0.30 g 2500 Tape & reel 7/8 ...

Page 8

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 8/8 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STTH312 ...

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