CMH04(TE12L,Q) Toshiba, CMH04(TE12L,Q) Datasheet - Page 4

• Manufacturer Part Number: CMH04(TE12L,Q)
• Description: DIODE HI EFF 200V 1A M-FLAT
• Manufacturer: Toshiba

Specifications of CMH04(TE12L,Q)

• Voltage - Forward (vf) (max) @ If: 980mV @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: 3-4E1A (M-Flat)
• Product: General Purpose Diodes
• Peak Reverse Voltage: 200 V
• Forward Continuous Current: 1 A
• Max Surge Current: 20 A
• Configuration: Single
• Recovery Time: 35 ns
• Forward Voltage Drop: 0.98 V
• Maximum Reverse Leakage Current: 10 uA
• Operating Temperature Range: - 40 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

100
50
30
10
5
3
1
1
Reverse voltage V R (V)
C
j
10
– V
R
Ta = 25°C
f = 1 MHz
(Typ.)
100
4
30
20
10
0
1
Surge forward current
(non-repetitive)
Number of cycles
10
Ta = 25°C
f = 50 Hz
2004-07-01
CMH04
100