BAS 40 B5003 Infineon Technologies, BAS 40 B5003 Datasheet - Page 3

• Manufacturer Part Number: BAS 40 B5003
• Description: DIODE SCHTKY SGL 40V 120MA SOT23
• Manufacturer: Infineon Technologies

Specifications of BAS 40 B5003

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 40mA
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 120mA (DC)
• Current - Reverse Leakage @ Vr: 1µA @ 30V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.12 A
• Max Surge Current: 0.2 A
• Configuration: Single
• Forward Voltage Drop: 1 V at 0.04 A
• Maximum Reverse Leakage Current: 1 uA at 30 V
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BAS40B5003INTR; BAS40B5003XT; SP000250514

1
Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
Forward voltage
I
I
I
Forward voltage matching
I
AC Characteristics
Diode capacitance
V
Differential forward resistance
I
Charge carrier life time
I
(BR)
F
F
F
F
F
F
R
R
V
= 1 mA
= 10 mA
= 40 mA
= 10 mA
= 10 mA, f = 10 kHz
= 25 mA
F
= 30 V
= 0 , f = 1 MHz
is the difference between lowest and highest V
= 10 µA
1)
A
= 25°C, unless otherwise specified
F
in a multiple diode component.
3
Symbol
V
I
V
C
R
R
(BR)
F
T
F
rr
V
F
min.
250
350
600
40
-
-
-
-
-
BAS40.../BAS140W
Values
310
450
720
typ.
10
3
-
-
-
-
max.
1000
380
500
100
2007-04-19
20
1
5
-
-
Unit
V
µA
mV
pF
ps