BAS 40 B5003 Infineon Technologies, BAS 40 B5003 Datasheet - Page 4

• Manufacturer Part Number: BAS 40 B5003
• Description: DIODE SCHTKY SGL 40V 120MA SOT23
• Manufacturer: Infineon Technologies

Specifications of BAS 40 B5003

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 40mA
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 120mA (DC)
• Current - Reverse Leakage @ Vr: 1µA @ 30V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.12 A
• Max Surge Current: 0.2 A
• Configuration: Single
• Forward Voltage Drop: 1 V at 0.04 A
• Maximum Reverse Leakage Current: 1 uA at 30 V
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BAS40B5003INTR; BAS40B5003XT; SP000250514

C
Diode capacitance C
f = 1MHz
Reverse current I
V
T
R
= Parameter
pF
10
10
10
10
10
5
4
3
2
0
A
1
-4
-5
-6
-7
-8
0
BAS 40...
0
25
10
50
R
= (T
T
= (V
75
VR = 40V
30V
20V
10V
A
)
100
R
20
)
°C
EHB00040
V
V
T
R
A
150
30
4
r
Forward resistance r
f = 10 kHz
Reverse current I
T
f
R
A
10
10
10
10
= Parameter
10
10
10
10
10
10
3
2
1
3
0.1
A
BAS 40...
3
2
1
0
-1
-2
0
BAS 40...
10
R
1
BAS40.../BAS140W
= (V
f
= (I
20
R
)
F
)
10
T
2007-04-19
A
30
= 150 C
mA 100
25 C
85 C
EHB00039
EHB00041
V
V
F
R
40