IDB18E120 Infineon Technologies, IDB18E120 Datasheet - Page 5

• Manufacturer Part Number: IDB18E120
• Description: DIODE 1200V 31A TO263-3
• Manufacturer: Infineon Technologies

Specifications of IDB18E120

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 2.15V @ 18A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 31A (DC)
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 195ns
• Mounting Type: Surface Mount
• Product: Power Diodes
• Peak Reverse Voltage: 1200 V
• Forward Continuous Current: 18 A
• Max Surge Current: 78 A
• Configuration: Single
• Recovery Time: 195 ns
• Forward Voltage Drop: 2.15 V
• Maximum Reverse Leakage Current: 100 uA
• Maximum Power Dissipation: 113 W
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Packages: PG-TO263-3
• If (typ): 18.0 A
• If (max): 31.0 A
• If,sm (max): 78.0 A
• Vf (typ): 1.65 V
• Ir (max): 100.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDB18E120XT

Rev.2.2
5 Typ. reverse recovery time
t
parameter: V
7 Typ. reverse recovery current
I
parameter: V
rr
rr
= f (di
= f (di
1000
ns
A
800
700
600
500
400
300
200
100
30
20
15
10
200
5
200
F
F
/dt)
/dt)
300
300
R
R
400
400
= 800V, T
= 800V, T
500
500
36A
18A
9A
600
600
j
j
= 125°C
= 125°C
700
700
36A
18A
9A
800
800
A/µs
A/µs
di
di
F
F
/dt
/dt
1000
1000
Page 5
6 Typ. reverse recovery charge
Q
parameter: V
8 Typ. reverse recovery softness factor
S = f(di
parameter: V
rr
nC
=f(di
4600
4200
4000
3800
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
18
14
12
10
200
8
6
4
2
200
F
F
/dt)
/dt)
300
300
R
R
400
400
= 800V, T
= 800V, T
500
500
36A
18A
9A
600
600
j
j
= 125 °C
= 125°C
700
700
IDB18E120
36A
18A
9A
2007-09-01
800
800
A/µs
A/µs
di
di
F
F
/dt
/dt
1000
1000