MUR8100EG ON Semiconductor, MUR8100EG Datasheet - Page 2

• Manufacturer Part Number: MUR8100EG
• Description: DIODE ULT FAST 8A 1000V TO220AC
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MUR8100EG

• Voltage - Forward (vf) (max) @ If: 1.8V @ 8A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 25µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.8 V
• Recovery Time: 100 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 100 A
• Reverse Current Ir: 25 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Current, Forward: 8 A
• Current, Reverse: 500 μA
• Current, Surge: 100 A
• Package Type: TO-220
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 2 °C/W
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -65 to +175 °C
• Time, Recovery: 100 ns
• Voltage, Forward: 1.8 V
• Voltage, Reverse: 1000 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MUR8100EGOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current
Non−Repetitive Peak Surge Current
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance, Junction−to−Case
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
Maximum Reverse Recovery Time
Controlled Avalanche Energy
(Rated V
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
(i
(i
(Rated DC Voltage, T
(Rated DC Voltage, T
(I
(I
(See Test Circuit in Figure 6)
F
F
F
F
= 8.0 A, T
= 8.0 A, T
= 1.0 A, di/dt = 50 A/ms)
= 0.5 A, i
R
, T
R
C
, Square Wave, 20 kHz, T
= 150°C) Total Device
R
C
C
= 1.0 A, I
= 150°C)
= 25°C)
C
C
REC
= 100°C)
= 25°C)
= 0.25 A)
Characteristic
Characteristic
C
Rating
= 150°C)
http://onsemi.com
2
MUR8100E
MUR880E
Symbol
Symbol
Symbol
T
W
V
V
I
R
I
J
F(AV)
I
FSM
RWM
RRM
V
, T
v
AVAL
FM
qJC
i
t
R
rr
F
R
stg
−65 to +175
Value
Value
Value
1000
800
100
500
100
8.0
2.0
1.5
1.8
16
25
75
20
°C/W
Unit
Unit
Unit
mJ
mA
°C
ns
V
A
A
A
V