IDW75E60 Infineon Technologies, IDW75E60 Datasheet
IDW75E60
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IDW75E60 Summary of contents
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... Power Semiconductors F,Tj=25°C j,max 1.65V 175°C Symbol IDW75E60 A C PG-TO-247-3 Marking Package D75E60 PG-TO-247-3 Value Unit 600 V A 120 82 75 220 A 225 A W 300 170 150 -55…+175 °C 260 °C Rev. 2.1 Nov 09 ...
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... 25° 00V dt= 146 0A / µ 5° 00V dt= 146 0A / µ 5° 00V dt= 146 0A / µ IDW75E60 Max. Value Unit 0.5 K/W 40 Value Unit min. typ. max. 600 - - V - 1.65 2.0 - 1.65 - µ 1000 - 121 - ns - 2.4 - µ 921 - A/µs - 155 - ns - 4.4 - µ 960 - A/µs - 182 - ...
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... Figure 4. Typical diode forward voltage as a function of junction temperature 3 IDW75E60 75°C 125°C , CASE TEMPERATURE C ≤ 175°C) I =150A F 75A 37.5A 50°C 100°C 150°C JUNCTION TEMPERATURE Rev. 2.1 Nov 09 ...
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... F Figure 8. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V =400V Dynamic test circuit in Figure E) 4 IDW75E60 T =175° =25°C J 1500A/µs DIODE CURRENT SLOPE = 75A =175° =25°C J 1500A/µ ...
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... K single pulse 1µs 10µs 100µs 1ms t , PULSE WIDTH P Figure 9. Diode transient thermal impedance as a function of pulse width (D=t /T) P Power Semiconductors τ 0.1495 0.02797 3.623 E-3 3.276 E-4 2.635 E τ τ 10ms 100ms 5 IDW75E60 Rev. 2.1 Nov 09 ...
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... Power Semiconductors 6 IDW75E60 Rev. 2.1 Nov 09 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 7 IDW75E60 Rev. 2.1 Nov 09 ...