BAT254,115 NXP Semiconductors, BAT254,115 Datasheet - Page 3

• Manufacturer Part Number: BAT254,115
• Description: DIODE SCHOTTKY 30V 200MA SOD110
• Manufacturer: NXP Semiconductors

Specifications of BAT254,115

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-110
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3412-2; 934039300115; BAT254 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOD110 standard mounting conditions.
2002 May 28
V
I
t
C
R
amb
R
rr
SYMBOL
SYMBOL
F
Schottky barrier diode
d
th j-a
= 25 °C unless otherwise specified.
forward voltage
reverse current
reverse recovery time
diode capacitance
thermal resistance from junction to
ambient
p
= 300 μs; δ = 0.02.
PARAMETER
PARAMETER
see Fig.2
V
when switched from I
I
I
f = 1 MHz; V
note 1
R
R
R
I
I
I
I
I
= 10 mA; R
= 1 mA; see Fig.5
F
F
F
F
F
= 25 V; note 1; see Fig.3
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
3
R
CONDITIONS
CONDITIONS
L
= 1 V; see Fig.4
= 100 Ω; measured at
F
= 10 mA to
240
320
400
500
800
2
5
10
VALUE
MAX.
315
Product data sheet
BAT254
mV
mV
mV
mV
mV
μA
ns
pF
UNIT
UNIT
K/W