SMBYW01-200 STMicroelectronics, SMBYW01-200 Datasheet
SMBYW01-200
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SMBYW01-200 Summary of contents
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... F(RMS) I Average forward current F(AV) I FSM Surge non repetitive forward current T stg Storage and junction temperature range T Maximum operating junction temperature j October 1999 - Ed 200 V 0.71 V 150 °C Parameter SMBYW01-200 SMB (JEDEC DO-214AA) Value 200 8 Tlead=140 0.5 tp=10ms 60 sinusoidal - 150 150 Unit ° ...
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... SMBYW01-200 THERMAL RESISTANCES Symbol Rth (j-l) Junction to lead STATIC ELECTRICAL CHARACTERISTICS Symbol Parameters V * Forward voltage drop Reverse leakage current R Pulse test : * tp = 380 s, < ms, < evaluate the maximum conduction losses use the following equation : 0. 0.118 x I F(AV) F (RMS) RECOVERY CHARACTERISTICS Symbol 0.5 A ...
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... Fig 6: Forward voltage drop versus forward current (maximum values). VFM(V) 50.00 10.00 1.00 0.10 0.01 1E+2 5E+2 0.0 SMBYW01-200 P=1.5W P=1.0W P=0.5W P=0.25W 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ta=25°C Ta=50°C Ta=75°C t(s) ...
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... SMBYW01-200 Fig. 7: Junction capacitance versus reverse voltage applied (typical values). C(pF VR( Fig. 9: Reverse recovery time versus dI trr(ns) 100 dIF/dt(A/µ 100 120 140 160 180 200 Fig. 11: Dynamic parameters versus junction temperature. Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C] 1.25 1.00 IRM 0.75 Qrr 0.50 Tj(° ...
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... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. REF 2.3 1.52 Package Weight SMB 0.11g STMicroelectronics GROUP OF COMPANIES http://www.st.com SMBYW01-200 DIMENSIONS Millimeters Min. Max. Min. A1 1.90 2.45 0.075 A2 0.05 0.20 0.002 b 1 ...