SMBYW01-200 STMicroelectronics, SMBYW01-200 Datasheet - Page 4

• Manufacturer Part Number: SMBYW01-200
• Description: DIODE FAST REC 200V 1A SMB
• Manufacturer: STMicroelectronics

Specifications of SMBYW01-200

• Voltage - Forward (vf) (max) @ If: 900mV @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 3µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-2509-2

SMBYW01-200
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 9: Reverse recovery time versus dI
Fig. 11: Dynamic parameters versus junction
temperature.
4/5
12
10
100
1.25
1.00
0.75
0.50
0.25
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0
1
C(pF)
0
trr(ns)
0
Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]
20
25
40
60
50
dIF/dt(A/µs)
80 100 120 140 160 180 200
IRM
10
VR(V)
Tj(°C)
Qrr
75
100
IF=IF(av)
90% confidence
Tj=125°C
F
125
/dt.
100
F=1MHz
Tj=25°C
200
150
Fig. 8: Reverse recovery current versus dI
6
5
4
3
2
1
0
Fig. 10: Reverse recovery charges versus dI
100
Fig. 12: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35 m)
120
100
90
80
70
60
50
40
30
20
10
80
60
40
20
0
IRM(A)
0
0
0
0
IF=IF(av)
90% confidence
Tj=125°C
Rth(j-a) (°C/W)
Qrr(nC)
20
20
40
40
1
60
60
80
dIF/dt(A/µs)
dIF/dt(A/µs)
80 100 120 140 160 180 200
2
S(Cu) (cm²)
100 120 140 160 180 200
3
IF=IF(av)
90% confidence
Tj=125°C
4
F
/dt .
F
/dt.
5