SDP06S60 Infineon Technologies, SDP06S60 Datasheet - Page 5

• Manufacturer Part Number: SDP06S60
• Description: DIODE 600V 6A TO-220AB
• Manufacturer: Infineon Technologies

Specifications of SDP06S60

• Voltage - Forward (vf) (max) @ If: 1.7V @ 6A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 6A (DC)
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 300pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: Q1521726; SDP06S60X; SDP06S60X

5 Typ. reverse current vs. reverse voltage
7 Typ. capacitance vs. reverse voltage
parameter: T
Rev. 2.4
I
C = f (V
R
= f (V
µA
10
10
10
pF
10
10
10
250
150
100
50
-1
-2
-3
100 150 200 250 300 350 400 450 500
0
2
1
0
10
R
R
)
)
0
150°C
125°C
100°C
25°C
C
= 25 °C, f = 1 MHz
10
1
10
2
V
V
V
V
R
R
600
10
Page 5
3
6 Transient thermal impedance
Z
parameter : D = t
8 Typ. C stored energy
E
thJC
C
K/W
=f(V
10
10
10
10
10
10
µJ
3.5
2.5
1.5
0.5
= f ( t
-1
-2
-3
-4
2
1
0
1
0
10
0
R
SDP06S60
)
-7
p
10
)
single pulse
100
-6
10
p
200
/ T
-5
10
-4
300
10
-3
400
SDP06S60
10
SDT06S60
2008-06-02
-2
D = 0.50
V
0.20
0.10
0.05
0.02
0.01
t
V
s
p
R
600
10
0