MBRS330T3 ON Semiconductor, MBRS330T3 Datasheet - Page 3

• Manufacturer Part Number: MBRS330T3
• Description: DIODE SCHOTTKY 30V 4A SMC
• Manufacturer: ON Semiconductor

Specifications of MBRS330T3

• Voltage - Forward (vf) (max) @ If: 500mV @ 3A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 4A
• Current - Reverse Leakage @ Vr: 2mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: MBRS330T3OSTR

1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
4.5
3.5
2.5
1.5
0.5
5
4
3
2
1
0
90
0
T
T
T
J
J
J
= 125°C
100
= 100°C
= 25°C
5
SQUARE WAVE
Figure 5. Current Derating
Figure 3. Typical Reverse Current
T
L
10
, LEAD TEMPERATURE (°C)
dc
V
110
R
, REVERSE VOLTAGE (V)
15
TYPICAL ELECTRICAL CHARACTERISTICS
120
20
700
600
500
400
300
200
100
0
0
130
TYPICAL CAPACITANCE AT 0 V = 658 pF
25
4
R
Freq = 20 kHz
qJL
30
140
= 11°C/W
8
Figure 7. Typical Capacitance
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V
12
35
R
, REVERSE VOLTAGE (V)
150
16
40
3
20
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
2
1
0
24
0
0
T
T
T
J
J
28
J
0.5
= 125°C
= 100°C
= 25°C
5
Figure 4. Maximum Reverse Current
Figure 6. Forward Power Dissipation
I
O
32
, AVERAGE FORWARD CURRENT (A)
1
T
J
(continued)
10
= 25°C
I
V
36
PK
1.5
R
, REVERSE VOLTAGE (V)
/I
O
15
40
= 5
2
I
PK
2.5
20
/I
O
= p
3
25
SQUARE
WAVE
3.5
30
4
35
4.5
dc
40
5