MBRS260T3G ON Semiconductor, MBRS260T3G Datasheet - Page 3

• Manufacturer Part Number: MBRS260T3G
• Description: DIODE SCHOTTKY 60V 2A SMB
• Manufacturer: ON Semiconductor

Specifications of MBRS260T3G

• Voltage - Forward (vf) (max) @ If: 630mV @ 2A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 200µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 2 A
• Max Surge Current: 60 A
• Configuration: Single
• Forward Voltage Drop: 0.63 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Dc: 0713
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRS260T3GOSTR

1.0E+00
1.0E+00
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−01
1.0E−02
1.0E−03
1.0E−04
3.5
2.5
1.5
0.5
3
2
1
0
60
Figure 5. Current Derating − Junction to Lead
0.00001
0.00001
2.0%
5.0%
2.0%
1.0%
5.0%
1.0%
50%
50%
20%
10%
20%
10%
70
dc
SQUARE WAVE
T
R
R
L
80
, LEAD TEMPERATURE (°C)
tjl(t)
tjl(t)
0.0001
0.0001
= R
= R
tjl*r(t)
tjl*r(t)
90
Figure 8. Thermal Response − Junction to Ambient
100
0.001
0.001
Figure 7. Thermal Response − Junction to Case
110
120
0.01
0.01
http://onsemi.com
130
t, TIME (s)
t, TIME (s)
3
0.1
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
2
1
0
0
I
O
Figure 6. Forward Power Dissipation
, AVERAGE FORWARD CURRENT (AMPS)
0.5
SQUARE WAVE
1.0
1.0
1
10
10
1.5
2
100
100
dc
2.5
1000
1000
3