SDT05S60 Infineon Technologies, SDT05S60 Datasheet - Page 3

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SDT05S60

Manufacturer Part Number
SDT05S60
Description
DIODE SCHOTTKY 5A 600V TO220-2
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of SDT05S60

Package / Case
TO-220-2
Voltage - Forward (vf) (max) @ If
1.7V @ 5A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
5A (DC)
Current - Reverse Leakage @ Vr
200µA @ 600V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
170pF @ 1V, 1MHz
Mounting Type
Through Hole
Product
Schottky Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
5 A
Max Surge Current
18.5 A
Configuration
Single
Forward Voltage Drop
1.7 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
Through Hole
Technology
thinQ!™
V
600.0 V
If (typ)
5.0 A
Qc (typ)
14.0 nC
Package
TO-220 (decapped middle leg)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SDT05S60X
SDT05S60XK
SP000014671
Electrical Characteristics, at T
Parameter
AC Characteristics
Total capacitive charge
V
Switching time
V
Total capacitance
V
V
V
Rev. 2.2
R
R
R
R
R
=400V, I
=400V, I
=1V, T
=300V, T
=600V, T
C
=25°C, f=1MHz
F
F
C
C
=5A, di
=5A, di
=25°C, f=1MHz
=25°C, f=1MHz
F
F
/dt=200A/µs, T
/dt=200A/µs, T
j
j
=150°C
=150°C
j
= 25 °C, unless otherwise specified
Page 3
Symbol
Q
t
C
rr
c
min.
-
-
-
-
-
Values
170
typ.
n.a
14
16
12
max.
SDT05S60
SDT05S60
2008-06-02
-
-
-
-
-
Unit
nC
ns
pF

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