SIDC11D60SIC3 Infineon Technologies, SIDC11D60SIC3 Datasheet - Page 3

• Manufacturer Part Number: SIDC11D60SIC3
• Description: DIODE SCHOTTKY 600V 4A WAFER
• Manufacturer: Infineon Technologies

Specifications of SIDC11D60SIC3

• Voltage - Forward (vf) (max) @ If: 1.9V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A (DC)
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Mounting Type: Surface Mount
• Package / Case: Wafer
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Other names: SP000013868

SIDC11D60SIC3
CHIP DRAWING:
1150
850
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004