MBRS360BT3G ON Semiconductor, MBRS360BT3G Datasheet

MBRS360BT3G

Manufacturer Part Number

MBRS360BT3G

Description

DIODE SCHOTTKY 60V 3A SMB

Manufacturer

ON Semiconductor

Datasheet

1.MBRS360T3G.pdf (6 pages)

Specifications of MBRS360BT3G

Voltage - Forward (vf) (max) @ If

740mV @ 3A

Voltage - Dc Reverse (vr) (max)

60V

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

150µA @ 60V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type

Surface Mount

Package / Case

DO-214AA, SMB

Product

Schottky Diodes

Peak Reverse Voltage

60 V

Forward Continuous Current

4 A

Max Surge Current

125 A

Configuration

Single

Forward Voltage Drop

0.74 V @ 3 A

Maximum Reverse Leakage Current

150 uA

Operating Temperature Range

- 65 C to + 175 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MBRS360BT3G

Manufacturer:

ONSemico

Quantity:

50 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

MBRS360BT3G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

MBRS360BT3G

Current page: 1 of 6
Download datasheet (138Kb)

MBRS360T3, MBRS360BT3G

Surface Mount

Schottky Power Rectifier

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes, in surface mount

applications where compact size and weight are critical to the system.

Features

•

Mechanical Characteristics

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

MAXIMUM RATINGS

January, 2010 − Rev. 7

Peak Repetitive Reverse Voltage

Average Rectified Forward Current

Nonrepetitive Peak Surge Current

Storage Temperature Range

Operating Junction Temperature

This device employs the Schottky Barrier principle in a large area

Leads are Readily Solderable

260°C Max. for 10 Seconds

Small Compact Surface Mountable Package with J−Bend Leads

Rectangular Package for Automated Handling

Highly Stable Oxide Passivated Junction

Excellent Ability to Withstand Reverse Avalanche Energy Transients

Guard−Ring for Stress Protection

Pb−Free Package is Available

Case: Epoxy, Molded, Epoxy Meets UL 94 V−0

Weight: 217 mg (Approximately), SMC

Finish: All External Surfaces Corrosion Resistant and Terminal

Lead and Mounting Surface Temperature for Soldering Purposes:

Polarity: Notch in Plastic Body Indicates Cathode Lead

Device Meets MSL 1 Requirements

ESD Ratings: Machine Model, C

Junction−to−Ambient: dP

Working Peak Reverse Voltage

DC Blocking Voltage

(Surge applied at rated load

conditions halfwave, single

phase, 60 Hz)

(Note 1)

95 mg (Approximately), SMB

Rating

Human Body Model, 3B

/dT

< 1/R

qJA

Symbol

F(AV)

FSM

RWM

RRM

stg

3.0 @ T

4.0 @ T

− 65 to +175

Value

125

= 137°C

= 127°C

Unit

°C

MBRS360T3G

MBRS360BT3G

†For information on tape and reel specifications,

MBRS360T3

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

3.0 AMPERES, 60 VOLTS

CASE 403

PLASTIC

SCHOTTKY BARRIER

B36

(Note: Microdot may be in either location)

ORDERING INFORMATION

SMC

AYWW

B36G

MARKING DIAGRAMS

http://onsemi.com

RECTIFIERS

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

Package

SMC

SMB

SMC

Publication Order Number:

CASE 403A

2500/Tape & Reel

PLASTIC

SMB

AYWW

Shipping

MBRS360T3/D

B36G

†

Related parts for MBRS360BT3G

MBRS360BT3G Summary of contents

Page 1

... MBRS360T3, MBRS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 2) Thermal Resistance, Junction−to−Ambient (Note 3) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3 25° Maximum Instantaneous Reverse Current (Note ...

Page 3

SQUARE WAVE ...

Page 4

D = 0.5 0.2 10 0.1 0.05 1 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 Figure 8. Thermal Response, Junction−to−Ambient, SMC Package 100 50% Duty Cycle 20% 10 0.1 Single Pulse 0.01 0.000001 0.00001 ...

Page 5

... 3.810 0.150 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS SMC PLASTIC PACKAGE CASE 403−03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

Page 6

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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