MBRS360BT3G ON Semiconductor, MBRS360BT3G Datasheet - Page 4

• Manufacturer Part Number: MBRS360BT3G
• Description: DIODE SCHOTTKY 60V 3A SMB
• Manufacturer: ON Semiconductor

Specifications of MBRS360BT3G

• Voltage - Forward (vf) (max) @ If: 740mV @ 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 4A
• Current - Reverse Leakage @ Vr: 150µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 4 A
• Max Surge Current: 125 A
• Configuration: Single
• Forward Voltage Drop: 0.74 V @ 3 A
• Maximum Reverse Leakage Current: 150 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

100
0.01
0.00001
0.1
100
10
0.1
0.000001
10
1
1
D = 0.5
0.05
0.01
0.2
0.1
50% Duty Cycle
10%
20%
5%
2%
1%
Single Pulse
SINGLE PULSE
0.00001
0.0001
Figure 9. Typical Thermal Response, Junction−to−Ambient, SMB Package
Figure 8. Thermal Response, Junction−to−Ambient, SMC Package
0.0001
0.001
0.001
0.01
http://onsemi.com
PULSE TIME (s)
0.01
t, TIME (s)
4
0.1
0.1
P
(pk)
P
DUTY CYCLE, D = t
(pk)
1
DUTY CYCLE, D = t
t
1
1
t
t
1
2
t
2
1
10
/t
2
10
1
/t
2
Test Type > min pad 1 oz
R
qJC
Test Type > min pad 1 oz
R
qJC
= min pad 1 oz C/W
= min pad 1 oz C/W
100
100
1000
1000