FII50-12E IXYS, FII50-12E Datasheet - Page 2

• Manufacturer Part Number: FII50-12E
• Description: IGBT PHASE NPT3 ISOPLUS I4-PAC-5
• Manufacturer: IXYS

Specifications of FII50-12E

• Configuration: Half Bridge
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 30A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 2nF @ 25V
• Power - Max: 200W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS i4-Pac
• Pin Count: 5
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 50
• Ic90, Tc = 90°c, Igbt, (a): 32
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 2.2
• Rthjc, Max, Igbt, (k/w): 0.6
• Package Style: ISOPLUS i4-PAC™ (5 - Lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
I
I
Symbol
V
I
t
E
R
R
Symbol
T
T
V
F
Symbol
d
d
Weight
© 2003 IXYS All rights reserved
Diodes
F25
F90
RM
Component
rr
VJ
stg
C
S
S
F
rec(off)
ISOL
thJC
thJS
,d
,d
A
A
Conditions
T
T
Conditions
I
I
V
(per diode)
Conditions
I
mounting force with clip
Conditions
pin - pin
pin - backside metal
F
F
ISOL
C
C
R
= 30 A; T
= 30 A; di
= 25°C
= 90°C
= 600 V; V
≤ 1 mA; 50/60 Hz
T
F
VJ
VJ
/dt = -1100 A/µs; T
GE
= 25°C
= 125°C
= 0 V
VJ
= 125°C
min.
min.
1.7
5.5
Characteristic Values
Characteristic Values
-55...+150
-55...+125
Maximum Ratings
Maximum Ratings
20...120
180
typ.
typ.
2.4
1.8
1.8
1.6
51
2500
9
48
25
max.
max.
2.8
1.3 K/W
K/W
mJ
mm
mm
V~
ns
°C
°C
N
A
A
V
V
A
g
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
Diode (typ. at T
Thermal Response
IGBT
Diode
C
C
C
C
th1
th2
th1
th2
= 0.067 J/K; R
= 0.175 J/K; R
= 0.039 J/K; R
= 0.090 J/K; R
V
V
0
0
= 0.95 V; R
= 1.26V; R
GE
J
FII 50-12E
= 125°C)
= 15 V; T
0
th1
th2
th1
th2
0
= 15 m Ω
= 45 m Ω
= 0.108 K/W
= 0.491 K/W
= 0.337 K/W
= 0.963 K/W
J
= 125°C)
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