FII50-12E IXYS, FII50-12E Datasheet - Page 3

• Manufacturer Part Number: FII50-12E
• Description: IGBT PHASE NPT3 ISOPLUS I4-PAC-5
• Manufacturer: IXYS

Specifications of FII50-12E

• Configuration: Half Bridge
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 30A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 2nF @ 25V
• Power - Max: 200W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS i4-Pac
• Pin Count: 5
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 50
• Ic90, Tc = 90°c, Igbt, (a): 32
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 2.2
• Rthjc, Max, Igbt, (k/w): 0.6
• Package Style: ISOPLUS i4-PAC™ (5 - Lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2003 IXYS All rights reserved
I
I
V
C
C
GE
120
100
120
100
80
60
40
20
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
20
15
10
Fig. 5
A
A
80
60
40
20
V
0
5
0
0
0
0
4
T
VJ
V
CE
= 125°C
1
Typ. turn on gate charge
= 20 V
6
40
2
8
V
GE
80
= 17 V
3
T
VJ
10
= 25°C
4
120
V
V
CE
GE
12
5
V
I
C
Q
CE
G
160
T
= 600 V
= 35 A
VJ
14
= 25°C
6
nC
15 V
13 V
11 V
9 V
V
V
200
7
16
Z
I
0.0001
Fig. 6
C
Fig. 2 Typ. output characteristics
Fig. 4
thJC
0.001
I
F
0.01
120
100
K/W
0.1
A
80
60
40
20
10
90
75
60
45
30
15
A
0.001
0
1
0
0
0
Typ. forward characteristics of
free wheeling diode
Typ. transient thermal impedance
1
T
0.01
VJ
1
= 125°C
2
single pulse
3
0.1
V
2
GE
FII 50-12E
= 17 V
4
V
V
F
T
CE
VJ
5
t
= 25°C
1
3
T
VJ
= 125°C
6
MUBW3512E7
V
13 V
15 V
11 V
diode
IGBT
9 V
s
V
3 - 4
10
7
4