FGA20N120FTDTU Fairchild Semiconductor, FGA20N120FTDTU Datasheet

IGBT TRENCH 20A 1200V TO-3PN

FGA20N120FTDTU

Manufacturer Part Number
FGA20N120FTDTU
Description
IGBT TRENCH 20A 1200V TO-3PN
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA20N120FTDTU.pdf (9 pages)

Specifications of FGA20N120FTDTU

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
298W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
±25V
Package Type
TO-3PN
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FGA20N120FTDTU
Manufacturer:
ST
Quantity:
2 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
FGA20N120FTDTU
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2007 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. A
Absolute Maximum Ratings
Notes:
1: Repetitive rating, Pulse width limited by max. junction temperature
Thermal Characteristics
FGA20N120FTD
1200V, 20A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
• RoHS compliant
Applications
• Induction heating and Microvewave oven
• Soft switching applications
V
V
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
C
CE(sat)
E
=1.6V @ I
Description
Parameter
TO-3PN
C
= 20A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 25
= 25
= 100
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
o
o
o
C
C
C
o
o
C
C
Typ.
-
-
-
G
-55 to +150
-55 to +150
Ratings
1200
± 25
298
300
119
40
20
60
20
Max.
0.42
2.0
C
E
40
December 2007
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
C
C
C
tm

Related parts for FGA20N120FTDTU

Image
Part Number
Description
Manufacturer
Datasheet
Request R
SM2G50US60
Part Number:
SM2G50US60
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
SM2G50US60.pdf (10 pages)
FTP5027RTU
Part Number:
FTP5027RTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FTP5021OTU
Part Number:
FTP5021OTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FDMS86300DC
Part Number:
FDMS86300DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86300DC.pdf (8 pages)
FDMS3006SDC
Part Number:
FDMS3006SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3006SDC.pdf (9 pages)
FDMS3008SDC
Part Number:
FDMS3008SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3008SDC.pdf (9 pages)
FDMS3016DC
Part Number:
FDMS3016DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3016DC.pdf (8 pages)
FDMS86101DC
Part Number:
FDMS86101DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86101DC.pdf (8 pages)
FDD86113LZ
Part Number:
FDD86113LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDD86113LZ.pdf (6 pages)
FDMS86500DC
Part Number:
FDMS86500DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86500DC.pdf (8 pages)
FDMS8558S
Part Number:
FDMS8558S
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8558S.pdf (8 pages)
FDMS8560S
Part Number:
FDMS8560S
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8560S.pdf (8 pages)
FDMS8570S
Part Number:
FDMS8570S
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8570S.pdf (8 pages)
FDMC86116LZ
Part Number:
FDMC86116LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMC86116LZ.pdf (7 pages)
FDMS86250
Part Number:
FDMS86250
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86250.pdf (7 pages)

FGA20N120FTDTU Summary of contents

Page 1

... R (Diode) Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FGA20N120FTD Rev. A General Description Using advanced field stop trench technology, Fairchild’s 1200V = 20A C trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche ruggedness ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGA20N120FTD FGA20N120FTDTU Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage V CES I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage GE(th) V Collector to Emitter Saturation Voltage CE(sat) ...

Page 3

Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGA20N120FTD Rev 25°C unless otherwise noted ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 20V 150 120 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteristics 120 Common ...

Page 5

Typical Performance Characteristics Figure 7. Saturation Voltage vs 10A Gate-Emitter Voltage, V Figure 9. Gate charge Characteristics 15 Common Emitter ...

Page 6

Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 500 Common Emitter Ω 15V 125 C C 100 Collector ...

Page 7

Typical Performance Characteristics Figure 19. Reverse Recovery Current Forward Current, I Figure 21.Reverse Recovery Time 1000 800 di/dt = 100A/ 600 200A/ 400 200 Forward Current, ...

Page 8

Mechanical Dimensions FGA20N120FTD Rev. A TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...

Related keywords