FGA20N120FTDTU Fairchild Semiconductor, FGA20N120FTDTU Datasheet - Page 4

• Manufacturer Part Number: FGA20N120FTDTU
• Description: IGBT TRENCH 20A 1200V TO-3PN
• Manufacturer: Fairchild Semiconductor

Specifications of FGA20N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA20N120FTD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
180
150
120
120
100
2.8
2.4
2.0
1.6
1.2
90
60
30
80
60
40
20
0
0
0.0
0
25
T
Common Emitter
V
T
T
C
Common Emitter
V
C
C
GE
Collector-EmitterCase Temperature, T
Temperature at Variant Current Level
GE
= 25
Characteristics
= 25
= 125
= 15V
= 15V
1.5
o
1
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
C
C
o
C
50
3.0
2
20V
8V 7V
4.5
75
3
V
17V
GE
15V
= 6V
6.0
4
I
C
40A
20A
= 10A
100
12V
CE
CE
10V
[V]
[V]
9V
7.5
5
C
[
o
C
]
9.0
125
6
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
180
150
120
120
100
90
60
30
80
60
40
20
20
16
12
0
0
8
4
0
0.0
0
3
T
Common Emitter
V
T
T
C
CE
C
C
= 125
= 25
= 125
= 20V
1.5
Collector-Emitter Voltage, V
o
o
C
o
4
C
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
6
I
C
20A
3.0
= 10A
8
4.5
9
7V
20V
40A
V
12
GE
6.0
Common Emitter
T
= 6V
C
GE
GE
= 25
12
CE
17V
[V]
[V]
o
16
15V
[V]
C
12V
10V
7.5
8V
9V
GE
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9.0
20
15