HGTG30N60C3D Fairchild Semiconductor, HGTG30N60C3D Datasheet - Page 5

• Manufacturer Part Number: HGTG30N60C3D
• Description: IGBT N-CH UFS 600V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 63A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 63A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2009 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
500
100
8000
7000
6000
5000
4000
3000
2000
1000
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
10
1
0
10
5
0
0
T
f
f
P
P
R
MAX1
MAX2
J
D
C
θJC
= 150
= ALLOWABLE DISSIPATION
= CONDUCTION DISSIPATION
EMITTER CURRENT
EMITTER CURRENT
VOLTAGE
I
I
(DUTY FACTOR = 50%)
= 0.6
CE
CE
V
= 0.05/(t
= (P
CE
o
20
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
o
5
D
C/W
- P
10
G
D(OFF)I
C
= 3Ω, L = 100µH, V
)/(E
ON
30
10
+ t
V
+ E
GE
D(ON)I
C
C
OFF
C
RES
= 15V
OES
IES
20
)
)
T
R
40
FREQUENCY = 400kHz
15
CE(PK)
J
G
V
= 150
GE
= 3Ω, L = 100µH
(Continued)
= 10V
30
= 480V
o
C, T
V
V
GE
50
GE
20
C
= 10V
40
= 75
= 15V
HGTG30N60C3D
o
C
60
60
25
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
250
200
150
100
600
480
360
240
120
6.0
5.0
4.0
3.0
2.0
1.0
50
0
0
FIGURE 14. SWITCHING SAFE OPERATING AREA
0
10
0
0
T
T
FIGURE 16. GATE CHARGE WAVEFORMS
J
J
= 150
= 150
EMITTER CURRENT
100
I
V
CE
CE
40
o
o
20
, COLLECTOR TO EMITTER CURRENT (A)
C, V
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
Q
GE
I
G
G (REF)
V
G
200
GE
V
= 3Ω, L = 100µH, V
, GATE CHARGE (nC)
LIMITED BY
CIRCUIT
= 15V, L = 100µH
CE
V
80
CE
= 10V or 15V
= 600V
30
= 3.54mA, R
= 200V
300
V
CE
120
= 400V
40
400
L
CE(PK)
= 20Ω, T
160
HGTG30N60C3D Rev. B
= 480V
500
C
50
= 25
o
200
C
600
15
12
9
6
3
0
60