HGTG30N60C3D Fairchild Semiconductor, HGTG30N60C3D Datasheet - Page 8

• Manufacturer Part Number: HGTG30N60C3D
• Description: IGBT N-CH UFS 600V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 63A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 63A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2009 Fairchild Semiconductor Corporation
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
2. When devices are removed by hand from their carriers,
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
5. Gate Voltage Rating - Never exceed the gate-voltage
6. Gate Termination - The gates of these devices are
7. Gate Protection - These devices do not have an internal
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
circuits with power on.
rating of V
permanent damage to the oxide layer in the gate region.
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to voltage
buildup on the input capacitor due to leakage currents or
pickup.
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
GEM
. Exceeding the rated V
GE
can result in
HGTG30N60C3D
Operating Frequency Information
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows f
f
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.
f
allowable dissipation (P
The sum of device switching and conduction losses must
not exceed P
and the conduction losses (P
P
E
shown in Figure 21. E
power loss (I
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for E
collector current equals zero (I
MAX2
MAX1
MAX2
C
ON
= (V
and E
is defined by f
whichever is smaller at each point. The information is
is defined by f
CE
CE
OFF
x I
) plots are possible using the information shown
CE
D
CE
D(OFF)I
. A 50% duty factor was used (Figure 13)
are defined in the switching waveforms
x V
)/2.
CE
MAX2
MAX1
ON
and t
) during turn-on and E
D
) is defined by P
is the integral of the instantaneous
= (P
= 0.05/(t
D(ON)I
C
D
CE
) are approximated by
- P
= 0).
are defined in Figure 21.
C
D(OFF)I
)/(E
D
OFF
= (T
+ t
HGTG30N60C3D Rev. B
+ E
OFF
JM
OFF
D(ON)I
JM
ON
- T
is the
; i.e. the
. t
). The
C
MAX1
D(OFF)I
).
)/R
θJC
or
.