FGL40N120ANTU Fairchild Semiconductor, FGL40N120ANTU Datasheet - Page 3

• Manufacturer Part Number: FGL40N120ANTU
• Description: IGBT NPT 1200V 64A TO-264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL40N120ANTU

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 40A
• Current - Collector (ic) (max): 64A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Rohs Compliant: YES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGL40N120AN Rev. A1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Saturation Voltage vs. Case
Figure 5. Saturation Voltage vs. V
300
250
200
150
100
50
20
16
12
0
5
4
3
2
1
8
4
0
25
0
0
T
Common Emitter
T
Common Emitter
V
C
C
GE
= 25
Temperature at Variant Current Level
= 25
= 15V
°
C
°
C
2
4
Collector-Emitter Voltage, V
50
Gate-Emitter Voltage, V
Case Temperature, T
I
C
4
= 20A
8
40A
75
80A
12
20V
6
C
17V
GE
[
°
C]
CE
15V
100
[V]
[V]
I
C
16
8
= 20A
GE
V
80A
40A
GE
= 10V
12V
125
10
20
3
Figure 4. Load Current vs. Frequency
Figure 2. Typical Saturation Voltage
Figure 6. Saturation Voltage vs. V
160
120
80
40
80
70
60
50
40
30
20
10
20
16
12
0
0
8
4
0
0.1
0
0
Common Emitter
V
T
T
Duty cycle : 50%
T
Power Dissipation = 100W
Common Emitter
T
GE
C
C
C
C
Characteristics
= 25
= 125
= 100
= 125
= 15V
o
o
C
°
C
°
C
C
4
Collector-Emitter Voltage, V
1
Gate-Emitter Voltage, V
2
Frequency [kHz]
V
Load Current : peak of square wave
CC
8
= 600V
I
C
10
= 20A
80A
40A
12
4
GE
CE
100
[V]
[V]
GE
16
www.fairchildsemi.com
1000
20
6