FGL40N120ANTU Fairchild Semiconductor, FGL40N120ANTU Datasheet - Page 5

• Manufacturer Part Number: FGL40N120ANTU
• Description: IGBT NPT 1200V 64A TO-264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL40N120ANTU

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 40A
• Current - Collector (ic) (max): 64A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Rohs Compliant: YES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGL40N120AN Rev. A1
Typical Performance Characteristics
Figure 13. Switching Loss vs. Collector Current
Figure 15. SOA Characteristics
0.01
100
0.1
0.1
10
10
1
1
0.1
Common Emitter
V
T
T
Single Nonrepetitive
Pulse Tc = 25
Curves must be derated
linearly with increase
in temperature
Ic MAX (Continuous)
20
Ic MAX (Pulsed)
C
C
GE
= 25
= 125
=
±
15V, R
°
C
°
C
30
Collector - Emitter Voltage, V
1
G
o
C
= 5
Collector Current, I
1E-3
0.01
0.1
Ω
40
1
1E-5
10
0.02
0.5
0.2
0.01
DC Operation
0.05
0.1
50
60
C
single pulse
[A]
1E-4
100
1ms
CE
Figure 17. Transient Thermal Impedance of IGBT
70
[V]
100
Eon
Eoff
µ
s
1000
80
50
µ
1E-3
s
Rectangular Pulse Duration [sec]
(Continued)
5
0.01
Figure 14. Gate Charge Characteristics
Figure 16. Turn-Off SOA
100
16
14
12
10
10
8
6
4
2
0
1
0
1
Common Emitter
R
T
0.1
C
L
= 15
= 25
Ω
°
C
50
Collector-Emitter Voltage, V
Pdm
Pdm
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
10
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
Gate Charge, Q
Safe Operating Area
V
1
GE
100
t1
t1
= 15V, T
t2
t2
Vcc = 200V
C
= 125
150
100
g
C
[nC]
C
10
o
C
CE
400V
[V]
200
600V
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1000
250