IRGB6B60KDPBF International Rectifier, IRGB6B60KDPBF Datasheet - Page 2

• Manufacturer Part Number: IRGB6B60KDPBF
• Description: IGBT W/DIODE 600V 13A TO220AB
• Manufacturer: International Rectifier

Specifications of IRGB6B60KDPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 5A
• Current - Collector (ic) (max): 13A
• Power - Max: 90W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 13A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 90W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGB6B60KDPBF

IRGB/S/SL6B60KDPbF
Electrical Characteristics @ T
Note:
Switching Characteristics @ T
RBSOA
SCSOA
t
V
∆V
V
V
∆
g
I
V
I
Qg
Qge
Qgc
E
E
E
t
t
t
t
E
E
E
t
t
t
C
C
C
Erec
t
I
r
CES
GES
d(on)
r
d(off)
f
d(on)
d(off)
f
rr
rr
V
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
tot
on
off
tot
ies
oes
res
(BR)CES
2
GE(th)

/
∆
/∆T
T
J
to „
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
are on page 15
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
–––
––– 2.20 2.50
–––
–––
–––
––– 1.25 1.45
––– 1.20 1.40
–––
–––
–––
–––
–––
–––
–––
–––
––– 18.2
–––
–––
–––
–––
–––
–––
––– 13.2
–––
–––
–––
–––
–––
–––
–––
–––
3.5
1.5
10
FULL SQUARE
1.80 2.20
–––
200
––– ±100
110
135
245
215
150
190
340
240
290
0.3
4.5
-10
3.0
1.0
9.2
1.9
–––
10
25
17
28
17
18
34
90
70
10
–––
–––
––– mV/°C V
–––
150
500
–––
–––
210
245
230
260
300
255
–––
–––
–––
175
–––
455
560
5.5
–––
34
26
22
37
26
27
80
14
V/°C
µA
nA
nC
pF
V
V
V
S
V
µJ
ns
µJ
ns
µs
µJ
ns
A
V
V
I
I
V
V
V
V
I
I
V
I
V
V
I
V
Ls = 150nH
I
V
Ls = 150nH, T
I
V
Ls = 150nH
I
V
Ls = 150nH, T
V
V
f = 1.0MHz
T
V
T
V
T
V
V
C
C
C
C
C
C
C
C
C
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
CC
GE
= 5.0A, V
= 5.0A,V
= 5.0A
= 5.0A
= 5.0A
= 5.0A, V
= 5.0A, V
= 5.0A, V
= 5.0A, V
= 150°C, I
= 150°C, Vp =600V, R
= 150°C
= 500V, V
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V,R
= 15V, R
= 15V,R
= 15V, R
= 0V
= 30V
= 360V, V
= 400V, I
= 15V,R
GE
GE
, I
, I
C
C
GE
GE
CC
CC
CC
CC
CE
CE
C
C
C
Conditions
Conditions
G
G
G
= 500µA
= 1.0mA, (25°C-150°C)
C
G
G
GE
T
F
= 250µA
= 1.0mA, (25°C-150°C)
= 15V,
= 5.0A, PW=80µs
J
J
= 100Ω, L =1.4mH
= 100Ω, L =1.4mH
GE
= 100Ω, Ls = 150nH
= 15V
= 26A, Vp =600V
= 600V
= 600V, T
J
= 400V
= 400V
= 400V
= 400V
= 100Ω L =1.4mH
= 100Ω L =1.4mH
= 5.0A, L = 1.4mH
= 25°C
= 150°C
= 150°C
= +15V to 0V,
= +15V to 0V
T
T
www.irf.com
J
J
= 25°C ƒ
= 150°C ƒ
J
G
= 150°C
T
= 100Ω
J
R
= 150°C
G
= 100Ω
CT4,WF3
5, 6,7
9,10,11
9,10,11
12
17,18,19
Ref.Fig.
Ref.Fig.
14, 16
20, 21
WF1WF2
13,15
WF4
CT4
WF1
WF2
8
CT4
CT4
CT3
CT1
CT2
CT4
4