IRGB6B60KDPBF International Rectifier, IRGB6B60KDPBF Datasheet - Page 4

• Manufacturer Part Number: IRGB6B60KDPBF
• Description: IGBT W/DIODE 600V 13A TO220AB
• Manufacturer: International Rectifier

Specifications of IRGB6B60KDPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 5A
• Current - Collector (ic) (max): 13A
• Power - Max: 90W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 13A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 90W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGB6B60KDPBF

IRGB/S/SL6B60KDPbF
4
20
18
16
14
12
10
Fig. 7 - Typ. IGBT Output Characteristics
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
Fig. 5 - Typ. IGBT Output Characteristics
0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
1
T
1
J
T
= 150°C; tp = 80µs
J
= -40°C; tp = 80µs
2
2
V CE (V)
V CE (V)
3
3
4
4
5
5
6
6
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
30
25
20
15
10
20
18
16
14
12
10
5
0
8
6
4
2
0
0.0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
T
J
1
= 25°C; tp = 80µs
tp = 80µs
0.5
2
-40°C
25°C
150°C
V CE (V)
V F (V)
1.0
3
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4
1.5
5
2.0
6