IRG4IBC20FDPBF International Rectifier, IRG4IBC20FDPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4IBC20FDPBF
• Description: IGBT W/DIODE 600V 14.3A TO220FP
• Manufacturer: International Rectifier

Specifications of IRG4IBC20FDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 9A
• Current - Collector (ic) (max): 14.3A
• Power - Max: 34W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 14.3A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 34W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4IBC20FDPBF

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Fig. 9 - Typical Switching Losses vs. Gate
0.90
0.88
0.86
0.84
0.82
0.80
0.78
1000
800
600
400
200
0
0
Fig. 7 - Typical Capacitance vs.
V
V
T
I
J
C
1
CC
GE
Collector-to-Emitter Voltage
= 480V
= 15V
= 25 C
= 9.0A
R
10
V
G
CE
°
, Gate Resistance (Ohm)
Resistance
V
C
C
C
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
20
=
=
=
=
0V,
C
C
C
ge
gc
ce
C res
C ies
C oes
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
Ω
40
SHORTED
50
100
0.1
10
1
20
16
12
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
8
4
0
0
R
V
V
GE
CC
V
Fig. 8 - Typical Gate Charge vs.
G
I
CC
C
= 15V
= 480V
= 50Ohm
= 400V
= 9.0A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
5
J
Q , Total Gate Charge (nC)
G
Ω
0
10
20 40 60 80 100 120 140 160
15
20
I =
I =
I =
C
C
C
°
25
4.5
18
9
A
A
A
5
30