IRGB30B60KPBF International Rectifier, IRGB30B60KPBF Datasheet - Page 5
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IRGB30B60KPBF
Manufacturer Part Number
IRGB30B60KPBF
Description
IGBT 600V 78A TO220AB
Manufacturer
International Rectifier
Specifications of IRGB30B60KPBF
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.35V @ 15V, 30A
Current - Collector (ic) (max)
78A
Power - Max
370W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
78A
Collector Emitter Voltage Vces
2.35V
Power Dissipation Pd
370W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGB30B60KPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGB30B60KPBF
Manufacturer:
INFINEON
Quantity:
12 000
www.irf.com
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
5
5
Fig. 10 - Typical V
Fig. 8 - Typical V
T
J
T
10
10
= 150°C
J
= -40°C
V GE (V)
V GE (V)
CE
CE
IRGB30B60KPbF, IRGS/L30B60K
vs. V
I CE = 15A
I CE = 30A
I CE = 60A
vs. V
I CE = 15A
I CE = 30A
I CE = 60A
15
15
GE
GE
20
20
250
200
150
100
20
18
16
14
12
10
50
8
6
4
2
0
0
Fig. 11 - Typ. Transfer Characteristics
5
0
T J = 150°C
Fig. 9 - Typical V
V
CE
5
T
= 50V; tp = 10µs
10
J
= 25°C
T J = 25°C
T J = 150°C
V GE (V)
V GE (V)
10
CE
vs. V
I CE = 15A
I CE = 30A
I CE = 60A
15
T J = 25°C
GE
15
20
20
5