IRGB30B60KPBF International Rectifier, IRGB30B60KPBF Datasheet - Page 6
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IRGB30B60KPBF
Manufacturer Part Number
IRGB30B60KPBF
Description
IGBT 600V 78A TO220AB
Manufacturer
International Rectifier
Specifications of IRGB30B60KPBF
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.35V @ 15V, 30A
Current - Collector (ic) (max)
78A
Power - Max
370W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
78A
Collector Emitter Voltage Vces
2.35V
Power Dissipation Pd
370W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGB30B60KPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGB30B60KPBF
Manufacturer:
INFINEON
Quantity:
12 000
6
IRGB30B60KPbF, IRGS/L30B60K
3000
2500
2000
1500
1000
3000
2500
2000
1500
1000
500
500
0
0
T
Fig. 14 - Typ. Energy Loss vs. R
0
J
0
= 150°C; L=200µH; V
T
Fig. 12 - Typ. Energy Loss vs. I
J
= 150°C; L=200µH; V
I
CE
25
= 30A; V
R
20
E OFF
G
= 10Ω; V
E OFF
50
R G ( Ω )
GE
I C (A)
40
= 15V
GE
E ON
E ON
75
CE
= 15V
= 400V
CE
60
= 400V,
100
G
C
80
125
10000
1000
1000
100
100
10
10
Fig. 13 - Typ. Switching Time vs. I
0
0
T
Fig. 15 - Typ. Switching Time vs. R
J
td ON
t R
T
= 150°C; L=200µH; V
J
td OFF
= 150°C; L=200µH; V
t F
R
25
td OFF
G
I
20
td ON
CE
= 10Ω; V
t R
= 30A; V
50
R G ( Ω )
I C (A)
40
GE
GE
= 15V
75
= 15V
CE
CE
= 400V
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60
= 400V
100
t F
C
G
125
80