STGW40NC60WD STMicroelectronics, STGW40NC60WD Datasheet - Page 6
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STGW40NC60WD
Manufacturer Part Number
STGW40NC60WD
Description
MOSFET N-CHAN 650V 40A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STGW40NC60WD.pdf
(14 pages)
Specifications of STGW40NC60WD
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 30A
Current - Collector (ic) (max)
70A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.9 V/2.1 A
Maximum Gate Emitter Voltage
+/- 20 V
Gate-emitter Leakage Current
+/- 100 nA
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
70 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
70A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Pd
250W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5742
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STGW40NC60WD
Manufacturer:
ST
Quantity:
12 500
Electrical characteristics
6/14
Table 8.
Symbol
I
I
Q
Q
V
rrm
rrm
t
t
rr
rr
F
rr
rr
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Collector-emitter diode
Parameter
I
I
I
di/dt =100 A/µs
(see Figure 20)
I
T
di/dt =100 A/µs
(see Figure 20)
F
F
F
F
C
= 30 A
= 30 A, T
= 30 A, V
= 30 A, V
= 125 °C,
Test conditions
C
R
R
= 125 °C
= 50 V,
= 50 V,
Min Typ.
STGW40NC60WD
2.55
100
290
2.4
1.8
5.8
45
56
Max
Unit
nC
nC
ns
ns
V
V
A
A