STGW40NC60WD STMicroelectronics, STGW40NC60WD Datasheet - Page 7

• Manufacturer Part Number: STGW40NC60WD
• Description: MOSFET N-CHAN 650V 40A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW40NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 30A
• Current - Collector (ic) (max): 70A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V/2.1 A
• Maximum Gate Emitter Voltage: +/- 20 V
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 70 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 250W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5742

STGW40NC60WD
2.1
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Output characteristics
Transconductance
Collector-emitter on voltage vs
collector current
Figure 3.
Figure 5.
Figure 7.
Transfer characteristics
Collector-emitter on voltage vs
temperature
Normalized gate threshold vs
temperature
Electrical characteristics
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